IRG4BC30UDPBF vs HGTG30N60C3 feature comparison

IRG4BC30UDPBF Infineon Technologies AG

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HGTG30N60C3 Fairchild Semiconductor Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG FAIRCHILD SEMICONDUCTOR CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 23 A 63 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Fall Time-Max (tf) 130 ns 275 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-220AB TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 100 W 208 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 300 ns 550 ns
Turn-on Time-Nom (ton) 62 ns 85 ns
Base Number Matches 1 3
Additional Feature LOW CONDUCTION LOSS
JESD-609 Code e0
Terminal Finish TIN LEAD

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