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IRFS31N20DPBF vs PSMN070-200B feature comparison

IRFS31N20DPBF International Rectifier

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PSMN070-200B NXP Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
parentfamilyid 1435883
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP NXP SEMICONDUCTORS
Package Description LEAD FREE, PLASTIC, D2PAK-3 PLASTIC, D2PAK-3
Pin Count 3 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
kg CO2e/kg 8.8
Average Weight (mg) 1979.3
CO2e (mg) 17417.841
Total Weight 1517.2
Category CO2 Kg 8.8
CO2 13351.36
EU RoHS Version RoHS 2 (2015/863/EU)
EU RoHS Exemptions 7(a)
Candidate List Date 2024-01-23
SVHC Over MCV 7439-92-1
CAS Accounted for Wt 100
CA Prop 65 Presence YES
CA Prop 65 CAS Numbers 7439-92-1, 7440-02-0
Conflict Mineral Status DRC Conflict Free Undeterminable
Conflict Mineral Status Source CMRT V3.02
Avalanche Energy Rating (Eas) 420 mJ 462 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 31 A 35 A
Drain-source On Resistance-Max 0.082 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 200 W 230 W
Pulsed Drain Current-Max (IDM) 124 A 140 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

Compare IRFS31N20DPBF with alternatives

Compare PSMN070-200B with alternatives