IRFR210TRPBF vs IRFR210-T1 feature comparison

IRFR210TRPBF International Rectifier

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IRFR210-T1 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code TO-252AA
Package Description LEAD FREE, PLASTIC, DPAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 130 mJ 31 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 2.6 A 2.7 A
Drain-source On Resistance-Max 1.5 Ω 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 10 A 11 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 2
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 25 W
Turn-off Time-Max (toff) 56 ns
Turn-on Time-Max (ton) 42 ns

Compare IRFR210TRPBF with alternatives

Compare IRFR210-T1 with alternatives