IRFR210-T1 vs IRFR210TRPBF feature comparison

IRFR210-T1 Samsung Semiconductor

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IRFR210TRPBF International Rectifier

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PSSO-G2 LEAD FREE, PLASTIC, DPAK-3
Pin Count 3 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 31 mJ 130 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 2.7 A 2.6 A
Drain-source On Resistance-Max 1.5 Ω 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 25 W
Pulsed Drain Current-Max (IDM) 11 A 10 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 56 ns
Turn-on Time-Max (ton) 42 ns
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-252AA
Additional Feature AVALANCHE RATED
Case Connection DRAIN
JEDEC-95 Code TO-252AA
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 25 W
Terminal Finish MATTE TIN OVER NICKEL
Time@Peak Reflow Temperature-Max (s) 30

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Compare IRFR210TRPBF with alternatives