IRFR210-T1 vs IRFR210 feature comparison

IRFR210-T1 Fairchild Semiconductor Corporation

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IRFR210 Vishay Intertechnologies

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2 DPAK-3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 31 mJ 130 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 2.7 A 2.6 A
Drain-source On Resistance-Max 1.5 Ω 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 11 A 10 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 8
Rohs Code No
Part Package Code TO-252AA
Pin Count 3
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Case Connection DRAIN
JEDEC-95 Code TO-252AA
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 25 W
Terminal Finish TIN LEAD

Compare IRFR210-T1 with alternatives

Compare IRFR210 with alternatives