IRFR1205TRLPBF vs RFD14N05 feature comparison

IRFR1205TRLPBF Infineon Technologies AG

Buy Now Datasheet

RFD14N05 Harris Semiconductor

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG HARRIS SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE AVALANCHE RATED
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 50 V
Drain Current-Max (ID) 20 A 14 A
Drain-source On Resistance-Max 0.027 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-251AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 107 W 48 W
Pulsed Drain Current-Max (IDM) 160 A 35 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 6
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 48 W
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 60 ns

Compare IRFR1205TRLPBF with alternatives

Compare RFD14N05 with alternatives