Part Details for IRFR1205TRLPBF by Infineon Technologies AG
Overview of IRFR1205TRLPBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR1205TRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IRFR1205TRLPBF - PLANAR 40<-<100V ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 25999 |
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$0.4655 / $0.5476 | Buy Now |
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Ameya Holding Limited | Single N-Channel 55V 0.027 Ohm 65 nC HEXFET® Power Mosfet - TO-252AA | 4848 |
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RFQ | |
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DISTI #
SMC-IRFR1205TRLPBF
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Sensible Micro Corporation | Trans Mosfet N-Ch 55V 44A 3-Pin(2+Tab) Dpak T/R RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 07+ Container: Cut Tape | 14 |
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$0.2640 / $0.3135 | RFQ |
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Chip1Cloud | MOSFET N-CH 55V 44A DPAK | 1570 |
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RFQ |
Part Details for IRFR1205TRLPBF
IRFR1205TRLPBF CAD Models
IRFR1205TRLPBF Part Data Attributes:
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IRFR1205TRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR1205TRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.027 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 107 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR1205TRLPBF
This table gives cross-reference parts and alternative options found for IRFR1205TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR1205TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR1205 | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR1205TRLPBF vs IRFR1205 |
| IRFR1205TRR | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR1205TRLPBF vs IRFR1205TRR |
| IRFR1205 | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR1205TRLPBF vs IRFR1205 |
| IRFR1205TRL | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR1205TRLPBF vs IRFR1205TRL |
| IRFR1205PBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR1205TRLPBF vs IRFR1205PBF |
| IRFR1205PBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR1205TRLPBF vs IRFR1205PBF |