IRFR120-T1 vs SIHFR120-GE3 feature comparison

IRFR120-T1 Samsung Semiconductor

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SIHFR120-GE3 Vishay Siliconix

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC VISHAY SILICONIX
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 30 mJ 210 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 8.4 A 7.7 A
Drain-source On Resistance-Max 0.27 Ω 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 42 W
Pulsed Drain Current-Max (IDM) 34 A 31 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 59 ns
Turn-on Time-Max (ton) 58 ns
Base Number Matches 1 1
Part Package Code TO-252AA
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Feedback Cap-Max (Crss) 34 pF
JEDEC-95 Code TO-252AA
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 42 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare SIHFR120-GE3 with alternatives