IRFR120-T1 vs IRFR120TRLPBF feature comparison

IRFR120-T1 Samsung Semiconductor

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IRFR120TRLPBF International Rectifier

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Avalanche Energy Rating (Eas) 30 mJ 210 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 8.4 A 7.7 A
Drain-source On Resistance-Max 0.27 Ω 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 42 W 42 W
Pulsed Drain Current-Max (IDM) 34 A 31 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 59 ns
Turn-on Time-Max (ton) 58 ns
Base Number Matches 1 3
Rohs Code Yes
Case Connection DRAIN
JEDEC-95 Code TO-252AA
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 42 W
Terminal Finish MATTE TIN OVER NICKEL
Time@Peak Reflow Temperature-Max (s) 30

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Compare IRFR120TRLPBF with alternatives