IRFP250R vs FQB34N20TM_AM002 feature comparison

IRFP250R Harris Semiconductor

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FQB34N20TM_AM002 onsemi

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 810 mJ 640 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 33 A 31 A
Drain-source On Resistance-Max 0.085 Ω 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 180 W
Power Dissipation-Max (Abs) 180 W 180 W
Pulsed Drain Current-Max (IDM) 130 A 124 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 220 ns
Turn-on Time-Max (ton) 210 ns
Base Number Matches 1 2
Manufacturer Package Code TO263A02
Factory Lead Time 20 Weeks
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30

Compare IRFP250R with alternatives

Compare FQB34N20TM_AM002 with alternatives