IRFP250R
vs
FQB34N20TM
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
FAIRCHILD SEMICONDUCTOR CORP
Package Description
FLANGE MOUNT, R-PSFM-T3
D2PAK-3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
810 mJ
640 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
33 A
31 A
Drain-source On Resistance-Max
0.085 Ω
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
180 W
Power Dissipation-Max (Abs)
180 W
Pulsed Drain Current-Max (IDM)
130 A
124 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
220 ns
Turn-on Time-Max (ton)
210 ns
Base Number Matches
3
2
Part Package Code
TO-263
Pin Count
3
Compare IRFP250R with alternatives
Compare FQB34N20TM with alternatives