IRFN240SMDR4
vs
IRFM250-JQR-BR1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TT ELECTRONICS PLC
|
TT ELECTRONICS PLC
|
| Package Description |
CHIP CARRIER, R-CBCC-N3
|
FLANGE MOUNT, S-MSFM-P3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
450 mJ
|
|
| Case Connection |
DRAIN
|
ISOLATED
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
13.9 A
|
27.4 A
|
| Drain-source On Resistance-Max |
0.25 Ω
|
0.1 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-CBCC-N3
|
S-MSFM-P3
|
| JESD-609 Code |
e4
|
e1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
METAL
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
CHIP CARRIER
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
56 A
|
110 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
GOLD
|
TIN SILVER COPPER
|
| Terminal Form |
NO LEAD
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| JEDEC-95 Code |
|
TO-254AA
|
|
|
|
Compare IRFN240SMDR4 with alternatives
Compare IRFM250-JQR-BR1 with alternatives