IRFN240SMDR4
vs
IRFN240SMD-JQR-B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TT ELECTRONICS PLC
TT ELECTRONICS PLC
Package Description
CHIP CARRIER, R-CBCC-N3
CHIP CARRIER, R-CBCC-N3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Category CO2 Kg
8.8
8.8
EU RoHS Version
RoHS 2 (2011/65/EU)
EU RoHS Exemptions
7(a)
Candidate List Date
2015-12-17
2015-12-17
EFUP
50
50
Conflict Mineral Status
DRC Conflict Free Undeterminable
DRC Conflict Free Undeterminable
Conflict Mineral Status Source
Conflict Minerals Statement
Conflict Minerals Statement
Avalanche Energy Rating (Eas)
450 mJ
450 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
13.9 A
13.9 A
Drain-source On Resistance-Max
0.25 Ω
0.25 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-CBCC-N3
R-CBCC-N3
JESD-609 Code
e4
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
56 A
56 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
GOLD
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IRFN240SMDR4 with alternatives
Compare IRFN240SMD-JQR-B with alternatives