IRFN150SMDR4
vs
2N7224UPBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
TT ELECTRONICS PLC
INTERNATIONAL RECTIFIER CORP
Package Description
CHIP CARRIER, R-CBCC-N3
FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
150 mJ
150 mJ
Case Connection
DRAIN
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
27 A
34 A
Drain-source On Resistance-Max
0.081 Ω
0.081 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-CBCC-N3
R-MSFM-P3
JESD-609 Code
e4
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
METAL
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
108 A
136 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
GOLD
Terminal Form
NO LEAD
PIN/PEG
Terminal Position
BOTTOM
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
HTS Code
8541.29.00.95
JEDEC-95 Code
TO-254AA
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
150 W
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
300 ns
Turn-on Time-Max (ton)
225 ns
Compare IRFN150SMDR4 with alternatives
Compare 2N7224UPBF with alternatives