IRFN140SMD-JQR-B
vs
IRFM150-JQR-B
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TT ELECTRONICS PLC
|
TT ELECTRONICS PLC
|
| Package Description |
CHIP CARRIER, R-CDCC-N3
|
FLANGE MOUNT, S-MSFM-P3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
250 mJ
|
150 mJ
|
| Case Connection |
DRAIN
|
ISOLATED
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
22 A
|
34 A
|
| Drain-source On Resistance-Max |
0.125 Ω
|
0.081 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-CDCC-N3
|
S-MSFM-P3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
METAL
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
CHIP CARRIER
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
88 A
|
136 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
NO LEAD
|
PIN/PEG
|
| Terminal Position |
DUAL
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Additional Feature |
|
AVALANCHE RATED
|
| JEDEC-95 Code |
|
TO-254AA
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRFN140SMD-JQR-B with alternatives
Compare IRFM150-JQR-B with alternatives