IRFMA450PBF
vs
FMV12N50ES
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Not Recommended
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
FUJI ELECTRIC CO LTD
|
Package Description |
IN-LINE, S-MSIP-P3
|
FLANGE MOUNT, R-PSFM-T3
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
750 mJ
|
460.8 mJ
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
12 A
|
12 A
|
Drain-source On Resistance-Max |
0.515 Ω
|
0.5 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
S-MSIP-P3
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
METAL
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
IN-LINE
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
48 A
|
48 A
|
Surface Mount |
NO
|
NO
|
Terminal Form |
PIN/PEG
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
TO-220AB
|
Pin Count |
|
3
|
Additional Feature |
|
LOW NOISE
|
JEDEC-95 Code |
|
TO-220AB
|
Power Dissipation-Max (Abs) |
|
65 W
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare IRFMA450PBF with alternatives
Compare FMV12N50ES with alternatives