IRFM350
vs
JANTV2N7227
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
SEMELAB LTD
ADVANCED POWER TECHNOLOGY INC
Package Description
FLANGE MOUNT, S-MSFM-P3
FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
HIGH VOLTAGE
AVALANCHE RATED
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
14 A
14 A
Drain-source On Resistance-Max
0.415 Ω
0.415 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254AA
TO-254AA
JESD-30 Code
S-MSFM-P3
S-MSFM-P3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
METAL
Package Shape
SQUARE
SQUARE
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
56 A
56 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
5
2
Avalanche Energy Rating (Eas)
700 mJ
Reference Standard
MIL-S-19500/592
Compare IRFM350 with alternatives
Compare JANTV2N7227 with alternatives