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Overview of JANTV2N7227 by Microsemi Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for JANTV2N7227 by Microsemi Corporation
Part Data Attributes for JANTV2N7227 by Microsemi Corporation
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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ADVANCED POWER TECHNOLOGY INC
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Package Description
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FLANGE MOUNT, S-MSFM-P3
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Additional Feature
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AVALANCHE RATED
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Avalanche Energy Rating (Eas)
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700 mJ
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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400 V
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Drain Current-Max (ID)
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14 A
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Drain-source On Resistance-Max
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0.415 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-254AA
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JESD-30 Code
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S-MSFM-P3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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METAL
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Package Shape
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SQUARE
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
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56 A
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Qualification Status
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Not Qualified
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Reference Standard
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MIL-S-19500/592
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Surface Mount
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NO
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Terminal Form
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PIN/PEG
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Terminal Position
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SINGLE
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Transistor Element Material
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SILICON
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Alternate Parts for JANTV2N7227
This table gives cross-reference parts and alternative options found for JANTV2N7227. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTV2N7227, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFM350 | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Temic Semiconductors | JANTV2N7227 vs IRFM350 |
| JANTXV2N7227 | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | International Rectifier | JANTV2N7227 vs JANTXV2N7227 |
| IRFM350 | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | TT Electronics Resistors | JANTV2N7227 vs IRFM350 |
| 2N7227 | 14A, 400V, 0.315ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTV2N7227 vs 2N7227 |
| IRFM350R1 | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | TT Electronics Resistors | JANTV2N7227 vs IRFM350R1 |
| JANTX2N7227 | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | Omnirel Corp | JANTV2N7227 vs JANTX2N7227 |
| JANTV2N7227 | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Advanced Power Technology | JANTV2N7227 vs JANTV2N7227 |
| 2N7227TX | Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | JANTV2N7227 vs 2N7227TX |
| JANTX2N7227 | 14A, 400V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254AA, 3 PIN | Intersil Corporation | JANTV2N7227 vs JANTX2N7227 |
| IRFM350-QR-B | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | TT Electronics Resistors | JANTV2N7227 vs IRFM350-QR-B |