IRFM140-JQR-B
vs
JANHCA2N7218
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TT ELECTRONICS PLC
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
FLANGE MOUNT, S-MSFM-T3
|
DIE-3
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
250 mJ
|
250 mJ
|
| Case Connection |
ISOLATED
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
28 A
|
28 A
|
| Drain-source On Resistance-Max |
0.125 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-254AA
|
|
| JESD-30 Code |
S-MSFM-T3
|
R-XUUC-N3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
METAL
|
UNSPECIFIED
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
UNCASED CHIP
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
112 A
|
112 A
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
NO LEAD
|
| Terminal Position |
SINGLE
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| JESD-609 Code |
|
e0
|
| Power Dissipation-Max (Abs) |
|
125 W
|
| Reference Standard |
|
MIL-19500/596F
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare IRFM140-JQR-B with alternatives
Compare JANHCA2N7218 with alternatives