IRFF223
vs
IRFF220PBF
feature comparison
All Stats
Differences Only
Rohs Code
No
Yes
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
200 V
Drain Current-Max (ID)
3 A
3.5 A
Drain-source On Resistance-Max
1.2 Ω
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
20 W
Pulsed Drain Current-Max (IDM)
12 A
14 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
9
1
Pbfree Code
Yes
Part Package Code
BCY
Package Description
CYLINDRICAL, O-MBCY-W3
Pin Count
2
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
0.242 mJ
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
20 W
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
100 ns
Turn-on Time-Max (ton)
90 ns
Compare IRFF223 with alternatives
Compare IRFF220PBF with alternatives