IRFF130-JQR-B
vs
IRFF132
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TT ELECTRONICS PLC
INTERSIL CORP
Package Description
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
8 A
7 A
Drain-source On Resistance-Max
0.18 Ω
0.25 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
HTS Code
8541.29.00.95
Case Connection
DRAIN
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
25 W
Pulsed Drain Current-Max (IDM)
28 A
Terminal Finish
Tin/Lead (Sn/Pb)
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
250 ns
Turn-on Time-Max (ton)
200 ns
Compare IRFF130-JQR-B with alternatives
Compare IRFF132 with alternatives