IRFE110E4
vs
JANTXV2N6782U
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
SEMELAB LTD
|
DEFENSE LOGISTICS AGENCY
|
Part Package Code |
LCC
|
|
Package Description |
CHIP CARRIER, R-CQCC-N16
|
HERMETIC SEALED, LCC-18
|
Pin Count |
18
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
7 mJ
|
7 mJ
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
3.5 A
|
3.5 A
|
Drain-source On Resistance-Max |
0.69 Ω
|
0.69 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CQCC-N16
|
R-CQCC-N15
|
JESD-609 Code |
e4
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
16
|
15
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
14 A
|
14 A
|
Qualification Status |
Not Qualified
|
Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
GOLD
|
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
QUAD
|
QUAD
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
4
|
Case Connection |
|
SOURCE
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Reference Standard |
|
MIL-19500/556
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRFE110E4 with alternatives
Compare JANTXV2N6782U with alternatives