JANTXV2N6782U
vs
IRFE110-JQR-BE4
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
TT ELECTRONICS PLC
|
Package Description |
HERMETIC SEALED, LCC-18
|
CHIP CARRIER, R-CQCC-N15
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
7 mJ
|
|
Case Connection |
SOURCE
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
3.5 A
|
3.1 A
|
Drain-source On Resistance-Max |
0.69 Ω
|
0.69 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CQCC-N15
|
R-CQCC-N15
|
Number of Elements |
1
|
|
Number of Terminals |
15
|
15
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
14 A
|
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/556
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
QUAD
|
QUAD
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
2
|
Rohs Code |
|
Yes
|
JESD-609 Code |
|
e4
|
Terminal Finish |
|
GOLD
|
|
|
|
Compare JANTXV2N6782U with alternatives
Compare IRFE110-JQR-BE4 with alternatives