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IRF843-009 vs MTP8N50 feature comparison

IRF843-009 International Rectifier

Buy Now Datasheet

MTP8N50 Motorola Semiconductor Products

Buy Now Datasheet
Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 450 V 500 V
Drain Current-Max (ID) 7 A 8 A
Drain-source On Resistance-Max 1.1 Ω 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A 32 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 2 18
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Feedback Cap-Max (Crss) 150 pF
JEDEC-95 Code TO-220AB
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Transistor Application SWITCHING
Turn-off Time-Max (toff) 320 ns
Turn-on Time-Max (ton) 210 ns
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

Compare IRF843-009 with alternatives

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