IRF840B_NL
vs
STB8NC50T4
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
STMICROELECTRONICS
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
320 mJ
600 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
8 A
8 A
Drain-source On Resistance-Max
0.8 Ω
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
32 A
32 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
135 W
Compare IRF840B_NL with alternatives
Compare STB8NC50T4 with alternatives