IRF840AJ69Z
vs
SIHB8N50D-GE3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
End Of Life
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
VISHAY INTERTECHNOLOGY INC
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
kg CO2e/kg
8.8
Average Weight (mg)
1995.93
CO2e (mg)
17564.141
Category CO2 Kg
8.8
8.8
Avalanche Energy Rating (Eas)
640 mJ
29 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
8 A
8.7 A
Drain-source On Resistance-Max
0.85 Ω
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
32 A
18 A
Qualification Status
Not Qualified
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Rohs Code
Samacsys Description
D Series Power MOSFET
Samacsys Manufacturer
Vishay
Samacsys Modified On
2024-04-26 09:38:57
EU RoHS Version
RoHS 2 (2015/863/EU)
Candidate List Date
2015-12-17
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.31
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max (Abs)
156 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IRF840AJ69Z with alternatives
Compare SIHB8N50D-GE3 with alternatives