IRF830 vs IRF830 feature comparison

IRF830 onsemi

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IRF830 STMicroelectronics

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ONSEMI STMICROELECTRONICS
Part Package Code TO-220AB TO-220AB
Package Description CASE 221A-09, 3 PIN TO-220, 3 PIN
Pin Count 3 3
Manufacturer Package Code CASE 221A-09
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer onsemi STMicroelectronics
Additional Feature FAST SWITCHING HIGH VOLTAGE, FAST SWITCHING
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 4.5 A 4.5 A
Drain-source On Resistance-Max 1.5 Ω 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 75 W 75 W
Pulsed Drain Current-Max (IDM) 18 A 18 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
HTS Code 8541.29.00.95
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 290 mJ
Feedback Cap-Max (Crss) 55 pF
Power Dissipation Ambient-Max 100 W
Turn-off Time-Max (toff) 205 ns
Turn-on Time-Max (ton) 102 ns

Compare IRF830 with alternatives

Compare IRF830 with alternatives