IRF830 vs IRF830LPBF feature comparison

IRF830 Comset Semiconductor

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IRF830LPBF Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer COMSET SEMICONDUCTORS VISHAY INTERTECHNOLOGY INC
Package Description TO-220, 3 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 280 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 4.5 A 4.5 A
Drain-source On Resistance-Max 1.5 Ω 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 60 pF
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 74 W
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 85 ns
Turn-on Time-Max (ton) 60 ns
Base Number Matches 31 2
Pbfree Code Yes
Factory Lead Time 13 Weeks
Case Connection DRAIN
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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