IRF7413PBF-1
vs
PHN1018
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G8
PLASTIC, SO-8
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
260 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
25 V
Drain Current-Max (ID)
13 A
9.6 A
Drain-source On Resistance-Max
0.011 Ω
0.021 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
1
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
2.5 W
Pulsed Drain Current-Max (IDM)
58 A
38 A
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
3
Part Package Code
SOIC
Pin Count
8
Additional Feature
LOGIC LEVEL COMPATIBLE
Qualification Status
Not Qualified
Transistor Application
SWITCHING
Compare IRF7413PBF-1 with alternatives
Compare PHN1018 with alternatives