PHN1018
vs
IRF7460TRPBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
PHILIPS SEMICONDUCTORS
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
8.7 A
12 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
e3
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
2.5 W
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN
Base Number Matches
2
1
Part Package Code
SOIC
Package Description
SO-8
Pin Count
8
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
240 mJ
DS Breakdown Voltage-Min
20 V
Drain-source On Resistance-Max
0.01 Ω
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
Moisture Sensitivity Level
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Pulsed Drain Current-Max (IDM)
100 A
Qualification Status
Not Qualified
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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