IRF7343TRPBF
vs
IRF7343QTRPBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
SOP-8
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
16 Weeks, 3 Days
Samacsys Manufacturer
Infineon
Infineon
Additional Feature
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
72 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
4.7 A
4.7 A
Drain-source On Resistance-Max
0.05 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM)
38 A
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Base Number Matches
1
1
Power Dissipation-Max (Abs)
2 W
Compare IRF7343TRPBF with alternatives
Compare IRF7343QTRPBF with alternatives