IRF7105TRPBF
vs
IRF7317PBF
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
17 Weeks, 5 Days
4 Weeks
Samacsys Manufacturer
Infineon
Infineon
Additional Feature
ULTRA LOW RESISTANCE
AVALANCHE RATED, HIGH RELIABILITY
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
25 V
20 V
Drain Current-Max (ID)
3.5 A
6.6 A
Drain-source On Resistance-Max
0.1 Ω
0.029 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM)
14 A
26 A
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Avalanche Energy Rating (Eas)
100 mJ
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
2 W
Qualification Status
Not Qualified
Compare IRF7105TRPBF with alternatives
Compare IRF7317PBF with alternatives