IRF6618TRPBF
vs
IRF6618TR1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
210 mJ
210 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
30 A
30 A
Drain-source On Resistance-Max
0.0022 Ω
0.0022 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XBCC-N3
R-XBCC-N3
JESD-609 Code
e1
e4
Moisture Sensitivity Level
1
3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
89 W
89 W
Pulsed Drain Current-Max (IDM)
240 A
240 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
SILVER NICKEL
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Package Description
ISOMETRIC-3
Pin Count
3
Compare IRF6618TRPBF with alternatives
Compare IRF6618TR1 with alternatives