IRF611
vs
STP4N20
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
STMICROELECTRONICS
Reach Compliance Code
unknown
not_compliant
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
200 V
Drain Current-Max (ID)
3.3 A
4 A
Drain-source On Resistance-Max
1.5 Ω
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
e3
Moisture Sensitivity Level
NOT SPECIFIED
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
8 A
16 A
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
13
1
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
ECCN Code
EAR99
Samacsys Manufacturer
STMicroelectronics
Avalanche Energy Rating (Eas)
150 mJ
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
60 W
Compare IRF611 with alternatives
Compare STP4N20 with alternatives