STP4N20
vs
IRF612
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
NATIONAL SEMICONDUCTOR CORP
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
STMicroelectronics
Avalanche Energy Rating (Eas)
150 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
4 A
2.6 A
Drain-source On Resistance-Max
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
e0
Number of Elements
1
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
60 W
43 W
Pulsed Drain Current-Max (IDM)
16 A
Qualification Status
Not Qualified
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Base Number Matches
1
15
Compare STP4N20 with alternatives
Compare IRF612 with alternatives