IRF610B_FP001 vs SPB80N06S2-07 feature comparison

IRF610B_FP001 Fairchild Semiconductor Corporation

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SPB80N06S2-07 Infineon Technologies AG

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Part Package Code SFM D2PAK
Package Description FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 40 mJ 530 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 55 V
Drain Current-Max (ID) 3.3 A 80 A
Drain-source On Resistance-Max 1.5 Ω 0.0066 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 38 W 250 W
Pulsed Drain Current-Max (IDM) 10 A 320 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Additional Feature AVALANCHE RATED
Case Connection DRAIN
JEDEC-95 Code TO-263AB

Compare IRF610B_FP001 with alternatives

Compare SPB80N06S2-07 with alternatives