IRF610B
vs
IPB80N06S2LH5ATMA1
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
INFINEON TECHNOLOGIES AG
|
Part Package Code |
SFM
|
|
Package Description |
TO-220, 3 PIN
|
GREEN, PLASTIC, TO-263, 3 PIN
|
Pin Count |
3
|
|
Reach Compliance Code |
unknown
|
compliant
|
Avalanche Energy Rating (Eas) |
40 mJ
|
700 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
55 V
|
Drain Current-Max (ID) |
3.3 A
|
80 A
|
Drain-source On Resistance-Max |
1.5 Ω
|
0.0062 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220
|
TO-263AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
|
Moisture Sensitivity Level |
NOT SPECIFIED
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
10 A
|
320 A
|
Qualification Status |
COMMERCIAL
|
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
ECCN Code |
|
EAR99
|
Samacsys Manufacturer |
|
Infineon
|
Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
Case Connection |
|
DRAIN
|
|
|
|
Compare IRF610B with alternatives
Compare IPB80N06S2LH5ATMA1 with alternatives