IPB80N06S2LH5ATMA1
vs
IXFH14N80
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
LITTELFUSE INC
Package Description
GREEN, PLASTIC, TO-263, 3 PIN
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
LITTELFUSE
Additional Feature
LOGIC LEVEL COMPATIBLE
AVALANCHE RATED
Avalanche Energy Rating (Eas)
700 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
800 V
Drain Current-Max (ID)
80 A
14 A
Drain-source On Resistance-Max
0.0062 Ω
0.7 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-247AD
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
320 A
56 A
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Rohs Code
HTS Code
8541.29.00.95
JESD-609 Code
e3
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
300 W
Power Dissipation-Max (Abs)
300 W
Qualification Status
Not Qualified
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
150 ns
Turn-on Time-Max (ton)
100 ns
Compare IPB80N06S2LH5ATMA1 with alternatives
Compare IXFH14N80 with alternatives