IRF610
vs
IRF611
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
INTERSIL CORP
Part Package Code
SFM
Package Description
TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Avalanche Energy Rating (Eas)
46 mJ
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
150 V
Drain Current-Max (ID)
3.3 A
3.3 A
Drain-source On Resistance-Max
1.58 Ω
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
43 W
43 W
Power Dissipation-Max (Abs)
43 W
43 W
Pulsed Drain Current-Max (IDM)
8 A
8 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
34 ns
34 ns
Turn-on Time-Max (ton)
38 ns
38 ns
Base Number Matches
2
2
Rohs Code
Case Connection
DRAIN
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare IRF610 with alternatives
Compare IRF611 with alternatives