IRF5M3710SCX
vs
IPB35N10S3L26ATMA1
feature comparison
Part Life Cycle Code |
Active
|
Not Recommended
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Package Description |
HERMETIC SEALED PACKAGE-3
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
350 mJ
|
175 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
35 A
|
35 A
|
Drain-source On Resistance-Max |
0.03 Ω
|
0.0322 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-254AA
|
TO-263AB
|
JESD-30 Code |
S-MSFM-P3
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
140 A
|
140 A
|
Surface Mount |
NO
|
YES
|
Terminal Form |
PIN/PEG
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
Factory Lead Time |
|
52 Weeks
|
Samacsys Manufacturer |
|
Infineon
|
Feedback Cap-Max (Crss) |
|
75 pF
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-55 °C
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Power Dissipation-Max (Abs) |
|
71 W
|
Reference Standard |
|
AEC-Q101; IEC-68-1
|
Terminal Finish |
|
Tin (Sn)
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IRF5M3710SCX with alternatives
Compare IPB35N10S3L26ATMA1 with alternatives