IRF353
vs
JANTXV2N6768
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
UNITRODE CORP
MOTOROLA INC
Package Description
TO-3, 2 PIN
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
350 V
400 V
Drain Current-Max (ID)
13 A
14 A
Drain-source On Resistance-Max
0.03 Ω
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
17
10
HTS Code
8541.29.00.95
Case Connection
DRAIN
Feedback Cap-Max (Crss)
200 pF
Power Dissipation Ambient-Max
150 W
Pulsed Drain Current-Max (IDM)
25 A
Reference Standard
MILITARY STANDARD (USA)
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
225 ns
Turn-on Time-Max (ton)
100 ns
Compare IRF353 with alternatives
Compare JANTXV2N6768 with alternatives