IRF353
vs
JAN2N6768
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
UNITRODE CORP
DEFENSE LOGISTICS AGENCY
Package Description
TO-3, 2 PIN
TO-3, 2 PIN
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
350 V
400 V
Drain Current-Max (ID)
13 A
14 A
Drain-source On Resistance-Max
0.03 Ω
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
150 W
Qualification Status
Not Qualified
Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
17
4
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
700 mJ
Case Connection
DRAIN
Operating Temperature-Min
-55 °C
Power Dissipation Ambient-Max
4 W
Pulsed Drain Current-Max (IDM)
56 A
Reference Standard
MIL-19500
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
300 ns
Turn-on Time-Max (ton)
225 ns
Compare IRF353 with alternatives
Compare JAN2N6768 with alternatives