IRF353
vs
JAN2N6768
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
UNITRODE CORP
|
DEFENSE LOGISTICS AGENCY
|
| Package Description |
TO-3, 2 PIN
|
TO-3, 2 PIN
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
350 V
|
400 V
|
| Drain Current-Max (ID) |
13 A
|
14 A
|
| Drain-source On Resistance-Max |
0.03 Ω
|
0.3 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-3
|
TO-204AA
|
| JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
150 W
|
150 W
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
17
|
4
|
| HTS Code |
|
8541.29.00.95
|
| Avalanche Energy Rating (Eas) |
|
700 mJ
|
| Case Connection |
|
DRAIN
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation Ambient-Max |
|
4 W
|
| Pulsed Drain Current-Max (IDM) |
|
56 A
|
| Reference Standard |
|
MIL-19500
|
| Transistor Application |
|
SWITCHING
|
| Turn-off Time-Max (toff) |
|
300 ns
|
| Turn-on Time-Max (ton) |
|
225 ns
|
|
|
|
Compare IRF353 with alternatives
Compare JAN2N6768 with alternatives