IRF3007STRLPBF
vs
SUM110N10-08
feature comparison
| Pbfree Code |
Yes
|
No
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
SILICONIX INC
|
| Part Package Code |
D2PAK
|
D2PAK
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
|
| Pin Count |
3
|
4
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
|
|
| Avalanche Energy Rating (Eas) |
946 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
75 V
|
|
| Drain Current-Max (ID) |
62 A
|
110 A
|
| Drain-source On Resistance-Max |
0.0126 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-263AB
|
|
| JESD-30 Code |
R-PSSO-G2
|
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
120 W
|
437.5 W
|
| Pulsed Drain Current-Max (IDM) |
320 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN OVER NICKEL
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare IRF3007STRLPBF with alternatives
Compare SUM110N10-08 with alternatives