IRF2805
vs
SP001571200
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Package Description |
PLASTIC PACKAGE-3
|
D2PAK-3/2
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
|
ULTRA LOW RESISTANCE
|
Avalanche Energy Rating (Eas) |
1220 mJ
|
590 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
55 V
|
Drain Current-Max (ID) |
75 A
|
75 A
|
Drain-source On Resistance-Max |
0.0047 Ω
|
0.0053 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
|
JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
700 A
|
680 A
|
Surface Mount |
NO
|
YES
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare IRF2805 with alternatives
Compare SP001571200 with alternatives