SP001571200
vs
IRHSNA58064PBF
feature comparison
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
D2PAK-3/2
|
CHIP CARRIER, R-CBCC-N3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
ULTRA LOW RESISTANCE
|
|
Avalanche Energy Rating (Eas) |
590 mJ
|
370 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
60 V
|
Drain Current-Max (ID) |
75 A
|
75 A
|
Drain-source On Resistance-Max |
0.0053 Ω
|
0.0056 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
R-CBCC-N3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
680 A
|
300 A
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
NO LEAD
|
Terminal Position |
SINGLE
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
Pin Count |
|
3
|
Operating Temperature-Max |
|
125 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Qualification Status |
|
Not Qualified
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare SP001571200 with alternatives
Compare IRHSNA58064PBF with alternatives