IRF230-JQR-B
vs
IRF131
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Not Recommended
Transferred
Ihs Manufacturer
TT ELECTRONICS PLC
INTERSIL CORP
Package Description
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
150 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
80 V
Drain Current-Max (ID)
9 A
14 A
Drain-source On Resistance-Max
0.4 Ω
0.16 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
175 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
36 A
56 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
11
HTS Code
8541.29.00.95
JESD-609 Code
e0
Power Dissipation Ambient-Max
79 W
Power Dissipation-Max (Abs)
79 W
Terminal Finish
TIN LEAD
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
85 ns
Turn-on Time-Max (ton)
105 ns
Compare IRF230-JQR-B with alternatives
Compare IRF131 with alternatives