IRF131 vs JANTXV2N6756 feature comparison

IRF131 FCI Semiconductor

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JANTXV2N6756 Unitrode Corporation

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Rohs Code No
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer FIRST COMPONENTS INTERNATIONAL UNITRODE CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 14 A 14 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Base Number Matches 11 8
HTS Code 8541.29.00.95
Case Connection DRAIN
DS Breakdown Voltage-Min 100 V
Drain-source On Resistance-Max 0.18 Ω
Feedback Cap-Max (Crss) 150 pF
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
Number of Terminals 2
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Reference Standard MILITARY STANDARD (USA)
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 85 ns
Turn-on Time-Max (ton) 105 ns

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