IRF1405Z
vs
SP001571200
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Not Recommended
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
PLASTIC PACKAGE-3
|
D2PAK-3/2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
|
ULTRA LOW RESISTANCE
|
| Avalanche Energy Rating (Eas) |
420 mJ
|
590 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
55 V
|
55 V
|
| Drain Current-Max (ID) |
75 A
|
75 A
|
| Drain-source On Resistance-Max |
0.0049 Ω
|
0.0053 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-220AB
|
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
600 A
|
680 A
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
16
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare IRF1405Z with alternatives
Compare SP001571200 with alternatives