IRF133
vs
JANTXV2N6756
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
Drain Current-Max (ID) |
12 A
|
14 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
155 °C
|
150 °C
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
79 W
|
75 W
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
Base Number Matches |
11
|
8
|
Package Description |
|
TO-3, 2 PIN
|
Additional Feature |
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
|
75 mJ
|
Case Connection |
|
DRAIN
|
DS Breakdown Voltage-Min |
|
100 V
|
Drain-source On Resistance-Max |
|
0.21 Ω
|
JEDEC-95 Code |
|
TO-204AA
|
JESD-30 Code |
|
O-MBFM-P2
|
Number of Terminals |
|
2
|
Package Body Material |
|
METAL
|
Package Shape |
|
ROUND
|
Package Style |
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Pulsed Drain Current-Max (IDM) |
|
56 A
|
Qualification Status |
|
Qualified
|
Reference Standard |
|
MIL-19500/542
|
Terminal Form |
|
PIN/PEG
|
Terminal Position |
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
Compare IRF133 with alternatives
Compare JANTXV2N6756 with alternatives