IRF133 vs IRF130 feature comparison

IRF133 Texas Instruments

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IRF130 Rochester Electronics LLC

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP ROCHESTER ELECTRONICS LLC
Package Description ,
Reach Compliance Code unknown unknown
ECCN Code EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 12 A 14 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 155 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Base Number Matches 11 17
Pbfree Code No
Case Connection DRAIN
DS Breakdown Voltage-Min 100 V
Drain-source On Resistance-Max 0.16 Ω
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
Number of Terminals 2
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status COMMERCIAL
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare IRF133 with alternatives

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